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| DIGITAL AUDIO MOSFET PD - 97254 IRFI4024H-117P Features Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 100W per channel into 6 load in full-bridge configuration amplifier Lead-free package VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max Key Parameters g 55 48 8.9 4.3 2.3 150 V m: nC nC C TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings g Parameter VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C EAS TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energyd Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. 55 20 11 6.9 44 14 5.4 0.11 7.4 -55 to +150 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units V A W W/C mJ C Thermal Resistance g Parameter RJC RJA Junction-to-Case f Junction-to-Ambient (free air) Typ. --- --- Max. 9.21 65 Units C/W www.irf.com 1 08/24/06 IRFI4024H-117P Electrical Characteristics @ TJ = 25C (unless otherwise specified) g Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance Internal Source Inductance Min. 55 --- --- 2.0 --- --- --- --- --- 6.5 --- --- --- --- --- --- --- Typ. Max. Units --- 54 48 --- -9.17 --- --- --- --- --- 8.9 1.6 0.77 3.5 3.0 4.3 2.3 5.9 2.0 13 3.4 320 47 31 4.5 7.5 --- --- 60 4.0 --- 20 250 200 -200 --- 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- pF VGS = 0V VDS = 50V ns Conditions VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 7.7A e V mV/C A nA S VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 7.7A VDS = 44V nC VGS = 10V ID = 7.7A See Fig. 6 and 15 VDS = VGS, ID = 25A --- --- --- --- --- --- --- --- --- VDD = 28V, VGS = 10V ID = 7.7A RG = 2.5 e = 1.0MHz, Between lead, 6mm (0.25in.) from package See Fig. 5 D G S and center of die contact Diode Characteristics g Parameter IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. --- --- --- --- --- Typ. Max. Units --- --- --- 17 11 11 A 44 1.3 26 17 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 7.7A, VGS = 0V e TJ = 25C, IF = 7.7A di/dt = 100A/s e Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.25mH, RG = 25, IAS = 7.7A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Specifications refer to single MosFET. 2 www.irf.com IRFI4024H-117P 100 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 10 BOTTOM ID, Drain-to-Source Current (A) 10 BOTTOM 4.5V 1 1 4.5V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1 60s PULSE WIDTH Tj = 150C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () ID = 7.7A VGS = 10V 10 T J = 150C 1.5 1 T J = 25C 1.0 VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 10 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 12.0 ID= 7.7A VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance(pF) 1000 Ciss Coss Crss VDS= 44V VDS= 28V VDS= 11V 100 10 1 10 VDS, Drain-to-Source Voltage (V) 100 0 2 4 6 8 10 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFI4024H-117P 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 150C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 10 100sec T J = 25C 1 1 0.1 VGS = 0V 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD, Source-to-Drain Voltage (V) 0.01 1 Tc = 25C Tj = 150C Single Pulse 10 VDS, Drain-to-Source Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage 12 10 ID, Drain Current (A) Fig 8. Maximum Safe Operating Area 4.0 VGS(th) Gate threshold Voltage (V) 3.5 8 6 4 2 0 25 50 75 100 125 150 T C , Case Temperature (C) 3.0 2.5 ID = 25A 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature 100 Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) 10 D = 0.50 0.20 1 R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) 0.8124 2.5228 2.7309 3.1439 i (sec) 0.000034 0.000535 0.009731 1.22140 J 1 0.1 Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100 0.01 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRFI4024H-117P RDS(on), Drain-to -Source On Resistance (m ) 220 ID = 7.7A 180 EAS , Single Pulse Avalanche Energy (mJ) 30 25 20 15 10 5 0 ID TOP 1.8A 3.5A BOTTOM 7.7A 140 100 T J = 125C 60 T J = 25C 20 2 4 6 8 10 12 14 16 25 50 75 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 13b. Unclamped Inductive Test Circuit LD VDS Fig 13c. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b Gate Charge Waveform www.irf.com 5 IRFI4024H-117P TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information AIR TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05 6 www.irf.com |
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